PCDP1265G1_T0_00001
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- Description: DIODE SIL CARB 650V 12A TO220AC
- Manufacturer: PANJIT
- Length: 0 mm
- Series: 650SiC-SBD
- Product Status: Active
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Current - Reverse Leakage @ Vr: 80 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 12A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Capacitance @ Vr, F: 452pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Datasheet: BRVN-PCDP1265G1_T0_00001
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- ECCN: EAR99
- HTSUS: 8541100000
