PJMF900N65E1_T0_00001
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BRVN:BRVN-PJMF900N65E1_T0_00001
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MPN:PJMF900N65E1_T0_00001
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MFR:
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Description:650V/ 900MOHM SUPER JUNCTION EAS
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
Import Tariff May Apply
Import Tariff may apply to this part if shipping to the United States.
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- Description: 650V/ 900MOHM SUPER JUNCTION EAS
- Manufacturer: PANJIT
- Length: 0 mm
- Series: 650V SJ MOSFET
- Product Status: Active
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AB-F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 25.5W (Tc)
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- ECCN: EAR99
- HTSUS: 8541100000
